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IXFA 16N50P IXFH 16N50P
IXFP 16N50P
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 10 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
8
16
2250
240
12
23
25
70
22
43
15
12
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.42 ° C/W
R thCS
R thCS
(TO-220)
(TO-247)
0.25
0.21
° C/W
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
16
35
1.5
A
A
V
TO-220 (IXTP) Outline
t rr
I RM
Q RM
I F = 16 A, -di/dt = 100 A/ μ s
V R = 100 V
130
6
0.6
200
ns
A
μ C
TO-247 (IXFH) Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A 4.7 5.3
.185 .209
Pins:
1 - Gate
2 - Drain
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
3 - Source
4 - Drain
b 1.0 1.4
.040 .055
1
2
3
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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